Tin disulphide (SnS2) thin film has been prepared on glass substrate by chemical spray pyrolysis technique using the precursor solutions of tin (IV) chloride and thiourea, which were atomized with compressed air as carrier gas. Thin layer of SnS2 film has been grown at lower thermal energy of 473 K. The Structural properties have been analyzed by X- ray diffraction (XRD) and surface morphology by SEM micrograph. The optical properties of the thin film deposited were obtained using experimentally recorded transmission spectral data as functions of the wavelength, in the range of 400– 800 nm. Analysis of the spectral absorption of the deposited film revealed optical direct forbidden band gap (2.2 eV) and indirect band gap energy (2.35 eV) respectively for SnS2 layer. The DC room temperature electrical resistivity of this film is calculated using four probe technique as 4.2 x 104 Ω cm in dark and 1.65 x 103 Ω cm in light respectively. Activation energy of this thin film was plotted by Arrhenius plot.
Vijayarajasekaran, J.; Gopalakrishnan, P.; Amalraj, L.; and Vijayakumar, K.
"Characterization of Spray Pyrolysised Nano Tin Disulphide Thin Film,"
International Journal of Thin Film Science and Technology: Vol. 9
, Article 1.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss1/1