ZnO:TM (TM=Sn, Mn, Al) thin films were successfully deposited on glass substrates using spray pyrolysis technique. X-ray analysis shows that ZnO:TM thin films crystallize in hexagonal structure with a preferred orientation of the crystallites along (002) direction and the crystallite size had increased with TM doping. The present study investigated the effect of TM type on the structural parameters. These films had direct band gap energy lying in the range of 3 – 2.25 eV and the average transmittance varied from 75 to 85 % with TM doping. The lowest observed figure of merit in the present study is 4.13×10-5 (Ω-1) for AZO thin films. All the optical expected absorption capacity and photocurrent (jph) depend on the TM type. The optical constants, such as the urbach energy, effective mass of the carriers (m*), refractive index (n) and extinction coefficient (k), were also evaluated. The AZO thin films exhibited the lowest resistivity (1.79 × 10-1 Ω cm).
N. Amroun, M.; Salim, K.; H. Kacha, A.; and Khadraoui, M.
"Effect of TM (TM= Sn, Mn, Al) Doping on the Physical Properties of ZnO Thin Films Grown by Spray Pyrolysis Technique: A comparative Study,"
International Journal of Thin Film Science and Technology: Vol. 9
, Article 2.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss1/2