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International Journal of Thin Film Science and Technology

International Journal of Thin Film Science and Technology

Abstract

Lead doped cadmium sulfide thin films Cd1-xPbxS (0 ≤ x ≥ 0.20) were deposited onto a glass substrate at a temperature of 523K at a low cost spray pyrolysis technique. They were characterized by their structural and optical properties energy dispersive x-ray analysis, scanning electron microscopy and x-ray diffraction. X-ray diffraction patterns of the films are identified as (100), (002), (101), (102), (110), (103) and (201) planes which have hexagonal crystal structure. No extra peak developing occurs with the increasing Pd concentration. The direct band gap energy of the film depends on the concentration. This value varies from 2.52 eV to 2.17 eV as required for solar cell and opto-electronic device applications.

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