Cross Sectional TEM Characterization of Epitaxial Silicon Film Grown using Hot Wire Chemical Vapor Deposition

Authors

M. Abul Hossion, Department of Physics, BSMR Maritime University, Dhaka 1216, Bangladesh.Follow
B. M. Arora, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.Follow

Abstract

We have investigated epitaxial growth of poly crystalline intrinsic silicon film grown on glass and Si/SiO2 substrate using hot wire chemical vapour deposition technique. We have grown 20 nm nucleation layer at 400°C followed by an epitaxial growth of 200 nm thick at 600°C. Than 800 nm thick layer was grown on top using high hydrogen silane ratio of 15:5. Hydrogen soaking was performed for well passivated film. Evaluation of different layers was performed using cross sectional transmission electron microscopy. Poly crystalline as well as epitaxial and columnar growth regions were well observed.

Recommended Citation

Abul Hossion, M. and M. Arora, B. (2020) "Cross Sectional TEM Characterization of Epitaxial Silicon Film Grown using Hot Wire Chemical Vapor Deposition," International Journal of Thin Film Science and Technology: Vol. 9 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss1/6