In the present paper, we have developed a model of a n-RADFET dosimeter device. Moreover, the study has addressed the effects of ionizing radiation on the surface potential and threshold voltage characteristics of the device. In addition, a detailed simulation analysis of the device has been conducted to obtain some further results. The study indicated that high sensitivity can be obtained for RADFET using n-MOSFET device. The results are expected to benefit in establishing the effectiveness of n-RADFET device as a dosimeter.
Pathak, Srijan; Singh, Spriha; Jha, Tanya; Agrawal, Ankush; and Tripathi, Shweta
"Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter,"
International Journal of Thin Film Science and Technology: Vol. 9
, Article 7.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss1/7