Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter

Authors

Srijan Pathak, Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004.Follow
Spriha Singh, Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004.Follow
Tanya Jha, Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004.Follow
Ankush Agrawal, Department of Electronics & Communication Engineering National Institute of Technology Raipur, Chattisgarh, India- 492010.Follow
Shweta Tripathi, Department of Electronics & Communication Engineering. Motilal Nehru National Institute of Technology, Allahabad, India-211004.Follow

Abstract

In the present paper, we have developed a model of a n-RADFET dosimeter device. Moreover, the study has addressed the effects of ionizing radiation on the surface potential and threshold voltage characteristics of the device. In addition, a detailed simulation analysis of the device has been conducted to obtain some further results. The study indicated that high sensitivity can be obtained for RADFET using n-MOSFET device. The results are expected to benefit in establishing the effectiveness of n-RADFET device as a dosimeter.

Recommended Citation

Pathak, Srijan; Singh, Spriha; Jha, Tanya; Agrawal, Ankush; and Tripathi, Shweta (2020) "Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter," International Journal of Thin Film Science and Technology: Vol. 9 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss1/7