A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

Authors

Anshika Srivastava, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad- 211004, India.Follow
Richa Singh, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad- 211004, India.Follow
Shweta Tripathi, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad- 211004, India.Follow

Abstract

In this work, an analytical model for sub-threshold conduction parameters has been demonstrated for short- channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET. For sub-threshold current and sub-threshold swing models, we have utilized drift-diffusion current density equation with virtual cathode concept of DG MOSFETs. The influence of double halo technique over gate length ratio of the three channel regions under three dissimilar gate materials of the device has been investigated in depth in terms of sub-threshold current and sub-threshold swing. Also, the reliance of sub-threshold current and sub-threshold swing on different device constraints has been scrutinized. Furthermore, the problem solving capability of (TMG-DH) DG MOS device over short channel effect (SCE) has been emphasized. Using ATLASTM Silvaco tool, verification of theoretical results has been performed with respect to the proposed model.

Recommended Citation

Srivastava, Anshika; Singh, Richa; and Tripathi, Shweta (2020) "A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET," International Journal of Thin Film Science and Technology: Vol. 9 : Iss. 2 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss2/4