In this paper, we used thermal evaporation method to deposit ZnS/CdS/CdTe triple layer thin film on a cleaned glass substrate under the pressure of 10-5 torr and carried out the effect of hydrogenation with different Hydrogen pressure, also see the effect of annealing. To study the change in an energy band gap due to hydrogenation and annealing, UV-VIS- NIR spectrophotometer has been used; there were three band gaps found, as 1.68, 2.0 and 3.90eV for CdTe, CdS and ZnS, respectively, and it is also observed that when thin films are hydrogenated and annealed together, then the band decreases. The XRD result of ZnS/CdS/CdTe thin film shows the peaks at a scattering angle (2θ) 23.78o, 28.72o, 39.34o, 46.41o and 55.50o corresponding to d-spacing 3.74, 3.08, 2.29, 1.96? and 1.64?, respectively, the cell parameters for CdTe, ZnS and CdS have evaluated as 6.48, 5.33 and 5.92?, respectively. The Thermal electric power measurements indicate n-nature of thin film, and also with hydrogenation and annealing together the electron concentration increases resultant n-nature remained the same. The Seebeck coefficient for hydrogenation with different pressure at fresh, 80psi and 100psi have found 10, 20 and 40, respectively, and also Seebeck coefficient for hydrogenated annealing thin film are 10, 60 and 70, respectively. The purpose of this research is to see the change in the optical characteristic with hydrogenation and annealing so that it can be used to absorb more light from solar spectrum, to increase the efficiency of the solar cell.
Kumar, Hemant and Singh, Mangej
"Effect of Hydrogenation and Annealing on ZnS/CdS/CdTe Thin Film for Solar Cell Application,"
International Journal of Thin Film Science and Technology: Vol. 9
, Article 2.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss3/2