Analog and RF Performance Analysis of 22nm Modified Source/Drain Dual Gate FDSOI MOSFET

Authors

Abhishek Kumar Malviya, Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.Follow
Himanshu Yadav, Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.Follow
R. K. Chauhan, Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.Follow
Anshika Srivastava, Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.Follow

Abstract

In this paper, 22nm FDSOI MOSFET having Modified Source/Drain with Dual Gate has been analyzed. This device, not only provides higher ON current but it has also a lower leakage current in order of pA. With the help of Dual Gate (DG) electrical characteristics and Short Channel Effects improved. Analysis parameters like Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Threshold roll-off, Carrier Concentration, Gate to drain Capacitance, Gate to Source Capacitance, cut-off frequency, Conduction and Valence Band Banding are analyzed using high-k spacers.

Recommended Citation

Kumar Malviya, Abhishek; Yadav, Himanshu; K. Chauhan, R.; and Srivastava, Anshika (2020) "Analog and RF Performance Analysis of 22nm Modified Source/Drain Dual Gate FDSOI MOSFET," International Journal of Thin Film Science and Technology: Vol. 9 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol9/iss3/5