The structural, optical, and electrical properties of as-deposited and gamma irradiated (50, 100, 150kGy) Ge18Bi4Se78 thin films have been investigated. The structural characteristics of both the as-deposited and gamma irradiated films are inspected by X-ray diffraction (XRD).The optical constants of all the films are analyzed in the wavelength range 250-2500 nm employing spectrophotometer measurements at normal incidence. The type of transition is estimated using the obtained optical constants. The optical energy gap Eop as well as Urbach Eu energy in addition to plasma frequency ωp are studied. Single oscillator and Drude models are used to discuss the refractive index in the normal dispersion region. The effect of γ irradiation on the DC conductivity of the considered films is inspected.
M. Abd El-Raheem, M.; E. Hassan, H.; M. Wakkad, M.; and M. Ali, H.
"The Effects of Gamma Irradiation on the Optical and Electrical Properties of Melt Quench Ge18Bi4Se78 Chalcogenide Glass.,"
Information Sciences Letters: Vol. 11
, PP -.
Available at: https://digitalcommons.aaru.edu.jo/isl/vol11/iss3/28