"First Demonstration of Orange-yellow Light Emitter Devices in InGaP/ InAlGaP Laser Structure" by Bayan A. Alnahhas

Effat Undergraduate Research Journal

Article Title

First Demonstration of Orange-yellow Light Emitter Devices in InGaP/ InAlGaP Laser Structure Using a Strain-induced Quantum Well Intermixing Technique

Authors

Bayan A. Alnahhas, Effat UniversityFollow

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on an InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. With this technique, we demonstrate the first yellow superluminescent (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW—the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode that cannot be grown with conventional methods.

Recommended Citation

A. Alnahhas, Bayan (2020) "First Demonstration of Orange-yellow Light Emitter Devices in InGaP/ InAlGaP Laser Structure Using a Strain-induced Quantum Well Intermixing Technique," Effat Undergraduate Research Journal: Vol. 1: Iss. 1, Article 8.
Available at: https://digitalcommons.aaru.edu.jo/eurj/vol1/iss1/8

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