Investigation of the Surface Structure of Si, Ge, GaAs, GaP by the Method of Ion Bombarding When Growing Solid Solutions from a Liquid Phase

Authors

A. S. Razzokov, Department of Physics, Urgench State University, 14, Kh. Alimdjan str, Urgench City, 220100, UzbekistanFollow
A. S. Saidov, Physical-Technical Institute NPO Physics-Sun of the Academy of Sciences of the Republic of Uzbekistan, 2B, Ch. Aitmatov St., Tashkent, 100084, UzbekistanFollow
U. O. Kutliev, Department of Physics, Urgench State University, 14, Kh. Alimdjan str, Urgench City, 220100, UzbekistanFollow
M. K. Karimov, Department of Physics, Urgench State University, 14, Kh. Alimdjan str, Urgench City, 220100, UzbekistanFollow

Abstract

The article presents the results of simulation with the method of ion bombardment of the surface of Si, Ge, GaAs, GaP. Theoretically, the impact parameters p(?) of surface components are determined when exposed to Ar+, Ne+, Xe+ ions with an initial energy of 1 keV, at scattering angles in the range from 00С

Recommended Citation

S. Razzokov, A.; S. Saidov, A.; O. Kutliev, U.; and K. Karimov, M. (2023) "Investigation of the Surface Structure of Si, Ge, GaAs, GaP by the Method of Ion Bombarding When Growing Solid Solutions from a Liquid Phase," International Journal of Thin Film Science and Technology: Vol. 12 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol12/iss3/5